recettes

1. L.K. Béland, Y. Anahory, D. Smeets, M. Guihard, P. Brommer, J.-F. Joly, J.-C. Pothier, L.J. Lewis, N. Mousseau, F. Schiettekatte, Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si, Phys. Rev. Lett. 111 (2013) 105502

Other applications

1. M. Molina-Ruiz, A. F. Lopeandía, M. González-Silveira, Y. Anahory, M. Guihard, G. Garcia, M. T. Clavaguera-Mora, F. Schiettekatte, J. Rodríguez-Viejo, Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry, Appl. Phys. Lett. 102 (2013) 143111
2. L. Hu, L. de la Rama, M. Efremov, Y. Anahory, F. Schiettekatte, L. H. Allen, Leslie, Synthesis and Characterization of Single-Layer Silver-Decanethiolate Lamellar Crystals, J. Amer. Chem. Soc. 133 (2011) 4367

1. Y. Anahory, M. Guihard, D. Smeets, R. Karmouch, F. Schiettekatte, Ph. Vasseur, P. Desjardins, Liang Hu, L.H. Allen, E. Leon-Gutierrez, J. Rodriguez-Viejo, Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors, Thermochim. Acta 510 (2010) 126.

Recently, our group successfully developed a nanocalorimeter comprising a thin layer of mono-crystalline Si on its surface. This device opens the door for calorimetric measurements to be made on a pure, atomically ordered, and well documented surface. This includes measuring the heat exchanges during the initial phases of thin layer growth, the formation of self-assembled nanostructures of semiconductors and organic materials, solid-state reaction in ultra-thin films, catalytic processes, etc.

1. Y. Anahory, M. Guihard, D. Smeets, R. Karmouch, F. Schiettekatte, Ph. Vasseur, P. Desjardins, Liang Hu, L.H. Allen, E. Leon-Gutierrez, J. Rodriguez-Viejo, Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors, Thermochimica Acta 510 (2010) 126

Recently, our group successfully developed a nanocalorimeter comprising a thin layer of mono-crystalline Si on its surface. This device opens the door for calorimetric measurements to be made on a pure, atomically ordered, and well documented surface. This includes measuring the heat exchanges during the initial phases of thin layer growth, the formation of self-assembled nanostructures of semiconductors and organic materials, solid-state reaction in ultra-thin films, catalytic processes, etc.

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Recently, our group successfully developed a nanocalorimeter comprising a thin layer of monocrystaline Si on its surface. This device opens the door for calorimetric measurements to be made on a pure, atomically ordered, and well documented surface. This includes measuring the heat exchanges during the initial phases of thin layer growth, the formation of self-assembled nanostructures of semiconductors and organic materials, catalytic processes, etc.

Nanocalorimetry is a technique developed by Leslie H. Allen's group at the University of Illinois at Urbana-Champaign. I was part of this group as a postdoc in 1999-2000 and then started developing the technique with my students at the Université de Montréal to look namely at damage annealing of low-energy ion-implanted silicon.

Nanocalorimetry is a technique developed by Leslie H. Allen's group at the University of Illinois at Urbana-Champaign. I was part of this group as a postdoc in 1999-2000 and then imported the technique at the Université de Montréal to look namely at damage annealing of low-energy ion-implanted silicon.

Description of the technique, fabrication and calculation method

Damage annealing

Melting point depression

Others

Nanocalorimetry is a technique developed by Leslie H. Allen's group at the University of Illinois at Urbana-Champaign. I was part of this group as a postdoc in 1999-2000 and the imported the technique at the Université de Montréal to look namely at damage annealing of low-energy ion-implanted silicon.

Nanocalorimetry is a thin-film equivalent of Differential Scanning Calorimetry (DSC) that can measure the heat associated with reactions or transformations occurring in ultra-thin films, that is, layers of the order of a monolayer or less. It is thus a valuable tool to investigate in situ the evolution of thin-films and nanostructures from a thermal point-of-view.

Here are some contributions regrouped by subject:

Description of the technique, fabrication and calculation method

1. R. Karmouch, J.-F. Mercure, F. Schiettekatte, Nanocalorimeter fabrication procedure and data analysis for investigations on implantation damage annealing, Thermochim. Acta 432 (2005) 186.
2. M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, F. Schiettekatte, Z. S. Zhang, L. H. Allen, Thin-film differential scanning nanocalorimetry: heat capacity analysis, Thermochimica Acta 412 (2004) 13.
3. M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, F. Schiettekatte, Z. S. Zhang, L. H. Allen, Ultra-sensitive, fast, thin-film differential scanning calorimeter, Rev. Sci. Instr. 75 (2004) 179.

Damage annealing

1. R. Karmouch, Y. Anahory, J.-F. Mercure, D. Bouilly, M. Chicoine, G. Bentoumi, R. Leonelli, Y.Q. Wang, F. Schiettekatte, Damage evolution in low-energy-ion implanted silicon, Phys. Rev. B75 (2007) 075304
2. J.-F. Mercure, R. Karmouch, Y. Anahory, S. Roorda, F. Schiettekatte, Structural relaxation of amorphous silicon depends on implantation temperature, Phys. Rev. B 71 (2005) 134205.
3. R. Karmouch, J.-F. Mercure, Y. Anahory, F. Schiettekatte, Concentration and ion energy independent annealing kinetics during ion implanted defects annealing, Appl. Phys. Lett. 86 (2005) 031912.
4. R. Karmouch, J.-F. Mercure, Y. Anahory, F. Schiettekatte, Damage annealing process in implanted poly-silicon studied by nanocalorimetry: effects of heating rate and beam flux, Nucl. Instr. Meth. B241 (2005) 341
5. J.-F. Mercure, R. Karmouch, S. Roorda, F. Schiettekatte, Y. Anahory, Radiation damage in silicon studied in situ by nanocalorimetry, Physica B 340-342 (2003) 622.

Melting point depression

1. M.Yu. Efremov, F. Schiettekatte, M. Zhang, E.A. Olson, A. T. Kwan, R.S. Berry, L.H. Allen. Discrete Periodic Melting Point Observations for Nanostructures Ensembles, Phys. Rev. Lett. 85 (2000) 3560.
2. M. Zhang, Yu. Efremov, F. Schiettekatte, E.A. Olson, A. T. Kwan, S.L. Lai, T. Wisleder, J. E. Greene, L.H. Allen. Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements, Phys. Rev. B62 (2000) 10548.

Other

1. A.T. Kwan, M.Yu. Efremov, E.A. Olson, F. Schiettekatte, M. Zhang, P.H. Geil L.H. Allen. Nanoscale calorimetry of isolated polyethylene single crystals, J. Polymer Sci. B39 (2001) 1237.
2. E. A. Olson, M. Yu. Efremov, A.T. Kwan, S. Lai, V. Petrova, F. Schiettekatte, J. T. Warren, M. Zhang, and L. H. Allen. Scanning calorimeter for nanoliter-scale liquid samples, Appl. Phys. Lett. 77 (2000) 2671.

En construction!