Articles publiés ou acceptés

  1. K. Prasai, J. Jiang, A. Mishkin, B. Shyam, S. Angelova, R. Birney, D. A. Drabold, M. Fazio, E. K. Gustafson, G. Harry, S. Hoback, J. Hough, C. Lévesque, I. MacLaren, A. Markosyan, I. W. Martin, C. S. Menoni, P. G. Murray, S. Penn, S. Reid, R. Robie, S. Rowan, F. Schiettekatte, R. Shink, A. Turner, G. Vajente, H-P. Cheng, M. M. Fejer, A. Mehta, R. Bassiri, High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing. Phys. Rev. Lett. 123 (2019) 045501
  2. J. Wang, S.H.Y. Huang, C. Herrmann, S.A. Scott, F. Schiettekatte, K.L. Kavanagh, Focussed He Ion Channeling Through Si Nanomembranes. J. Vac. Sci. Technol. B36 (2018) 021203
  3. G. Vajente, R. Birney, A. Ananyeva, S. Angelova, R. Asselin, B. Baloukas, R. Bassiri, G. Billingsley, M. M. Fejer, D. Gibson, L. J. Godbout, E. Gustafson, A. Heptonstall, J. Hough, S. MacFoy, A. Markosyan, I. Martin, L. Martinu, P. G. Murray, S. Penn, S. Roorda, S. Rowan, F. Schiettekatte, R. Shink, C. Torrie, D. Vine, S. Reid, R. X. Adhikari. Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings. Class. Quant. Grav. 35 (2018) 075001
  4. M. Chicoine, F. Schiettekatte, M.I. Laitinen, T. Sajavaara, Oxy-nitrides characterization with a new ERD-TOF system, Nucl. Intrum. Meth. B 406 (2017) 112
  5. M. Mayer, P. Malinsky, F. Schiettekatte, Z. Zolnai, Intercomparison of ion beam analysis software for the simulation of backscattering spectra from two-dimensional structures, Nucl. Instrum. Meth. B 385 (2016) 65
  6. F. Schiettekatte, M. Chicoine, Spectrum simulation of rough and nanostructured targets from their 2D and 3D image by Monte Carlo methods, Nucl. Instrum. Meth. B 371 (2016) 106
  7. M. Moser, P. Reichart, A. Bergmaier, C. Greubel, F. Schiettekatte, G. Dollinger, Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation, Nucl. Instrum. Meth. B 371 (2016) 161
  8. M. Celikin, D. Barba, A. Ruediger, M. Chicoine, F. Schiettekatte, F. Rosei, Co-mediated nucleation of erbium/silicon nanoclusters in fused silica, J. Mater. Res. 30 (2015) 3003
  9. A. Fekecs, A. Korinek, M. Chicoine, B. Ilahi, F. Schiettekatte, D. Morris, R. Arès, Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure, Phys. Status Solidi A 212 (2015) 1888
  10. A. Fekecs, M. Chicoine, B. Ilahi, A. J. SpringThorpe, F. Schiettekatte, D. Morris, P. G. Charette, R. Arès, Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions, Nucl. Instrum. Meth. B 359 (2015) 99
  11. F. Schiettekatte, Tails, Nucl. Instrum. Meth. B 332 (2014) 404
  12. L.K. Béland, Y. Anahory, D. Smeets, M. Guihard, P. Brommer, J.-F. Joly, J.-C. Pothier, L.J. Lewis, N. Mousseau, F. Schiettekatte, Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si, Phys. Rev. Lett. 111 (2013) 105502
  13. P. Turcotte-Tremblay, M. Guihard, S. Gaudet, M. Chicoine, C. Lavoie, P. Desjardins, F. Schiettekatte, Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si, J. Vac. Sci. Technol. B 31 (2013) 051213
  14. A. Fekecs, M. Chicoine, B. Ilahi, F. Schiettekatte, P.G. Charette, R. Ares, Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing, J. Phys. D: Appl. Phys 46 (2013) 165106
  15. M. Molina-Ruiz, A. F. Lopeandía, M. González-Silveira, Y. Anahory, M. Guihard, G. Garcia, M. T. Clavaguera-Mora, F. Schiettekatte, J. Rodríguez-Viejo, Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry, Appl. Phys. Lett. 102 (2013) 143111
  16. A. Fekecs, M. Bernier, D. Morris, M. Chicoine, F. Schiettekatte, P. Charette, and R. Arès, Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices, Optical Materials Express 1 (2011) 1165
  17. M. Mayer, W. Eckstein, H. Langhuth, F. Schiettekatte, U. von Toussaint, Computer Simulation of Ion Beam Analysis: Possibilities and Limitations. Nucl. Instrum. Meth. B 269 (2011) 3006
  18. J.-C. Pothier, F. Schiettekatte, L.J. Lewis, Flowing damage in ion-implanted amorphous silicon, Phys. Rev. B 83 (2011) 235206
  19. L. Hu, L. de la Rama, M. Efremov, Y. Anahory, F. Schiettekatte, L. H. Allen, Leslie, Synthesis and Characterization of Single-Layer Silver-Decanethiolate Lamellar Crystals, J. Amer. Chem. Soc. 133 (2011) 4367
  20. Y. Anahory, M. Guihard, D. Smeets, R. Karmouch, F. Schiettekatte, Ph. Vasseur, P. Desjardins, Liang Hu, L.H. Allen, E. Leon-Gutierrez, J. Rodriguez-Viejo, Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors, Thermochim. Acta 510 (2010) 126.
  21. H. Kallel N. Mousseau, F. Schiettekatte, Evolution of the Potential-Energy Surface of Amorphous Silicon Phys. Rev. Lett. 105 (2010) 045503.
  22. D. Barba, D. Koshel, F. Martin, G.G. Ross, M. Chicoine, F. Schiettekatte, M. Yedji, J. Demarche, G. Terwagne, Silicon nanocrystal synthesis by implantation of natural Si isotopes, J. Luminescence 130 (2010) 669.
  23. R. Kumaran, S.E. Webster, S. Penson, W. Li, T. Tiedje, P. Wei, F. Schiettekatte, Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers, Optics Lett. 34 (2009) 3358.
  24. O. Moutanabbir, YJ. Chabal, M. Chicoine, S. Christiansen, R. Krause-Rehberg, F. Schiettekatte, R. Scholz, O. Seitz, S. Senz, F. Süßkraut, U. Gösele, Mechanisms of ion-induced GaN thin layer splitting, Nucl. Instr. Meth. B267 (2009) 1264.
  25. M. Guihard, P. Turcotte-Tremblay, S. Gaudet, C. Coia, S. Roorda, P. Desjardins, C. Lavoie, F. Schiettekatte, Controlling nickel silicide phase formation by Si implantation damage, Nucl. Instr. Meth. B267 (2009) 1285.
  26. J.-F. Desjardins, M. Chicoine, F. Schiettekatte, D. Barba, F. Martin, G.G. Ross, Impact of Ni co-implantation on Si nanocrystals formation and luminescence, Nucl. Instr. Meth. B267 (2009) 1317.
  27. I.B. Radovic, M. Jaksic, F. Schiettekatte, Technique for sensitive carbon depth profiling in thin samples using C-C elastic scattering, 24 (2009) 194.
  28. F. Schiettekatte, Fast Monte Carlo for Ion Beam Analysis Simulations, Nucl. Instr. Meth. B266 (2008) 1880.
  29. C. Dion, P. Desjardins, F. Schiettekatte, M. Chicoine, M. D. Robertson, N. Shtinkov, P. J. Poole, X. Wu, S. Raymond, Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation, J. Appl. Phys. 104, (2008) 043527.
  30. O. Moutanabbir, R. Scholz, S. Senz, U. Gösele, M. Chicoine, F. Schiettekatte, F. Süßkraut, R. Krause-Rehberg, Microstructural evolution in H ion induced splitting of freestanding GaN, Appl. Phys. Lett. 93 (2008) 031916
  31. P.J. Simpson, A.P. Knights, M. Chicoine, K. Dudeck, O. Moutanabbir, S.Ruffell, F. Schiettekatte, B. Terreault, Thermal evolution of defects produced by implantation of H, D and He in Silicon, App. Surf. Sci. 255 (2008) 63.
  32. N. Desrosiers, A. Giguère, B. Terreault, M. Chicoine, F. Schiettekatte, Implantation effects of low energy H and D ions in germanium at -120 °C and room temperature. Nucl. Instr. Meth. B266 (2008) 1880
  33. C. Dion, P. Desjardins, N. Shtinkov, F. Schiettekatte, P. J. Poole, and S. Raymond, Effects of grown-in defects on interdiffusion dynamics in InAs/InP(001) quantum dots subjected to rapid thermal annealing, J. Appl. Phys. 103 (2008) 083526
  34. C. Dion, P. Desjardins, N. Shtinkov, M. D. Robertson, F. Schiettekatte, P. J. Poole, S. Raymond, Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation, Phys. Rev. B77 (2008)075338
  35. L. Stafford, W.T. Lim, S.J. Pearton, Ju-Il Song, J.-S. Park, Y.-W. Heo, J.-H. Lee, J.-J. Kim, M. Chicoine, F. Schiettekatte, Deep etch-induced damage during ion-assisted chemical etching of sputtered indium-zinc-oxide films in Ar/CH4/H2 plasmas, Thin Solid Films 516 (2008) 2869
  36. L. Stafford, W.T. Lim, S.J. Pearton, M. Chicoine, F. Schiettekatte, J.-I. Song, J.-S. Park, Y.W. Heo, J.-H. Lee, J.-J. Kim, I.I. Kravchenko, Influence of the film properties on the plasma etching dynamics of rf-sputtered indium-zinc-oxide layers, J. Vac. Sci. Technol. A25 (2007) 659
  37. R. Karmouch, Y. Anahory, J.-F. Mercure, D. Bouilly, M. Chicoine, G. Bentoumi, R. Leonelli, Y.Q. Wang, F. Schiettekatte, Damage evolution in low-energy-ion implanted silicon, Phys. Rev. B75 (2007) 075304
  38. O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, P. J. Simpson, Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon, Phys. Rev. B75 (2007) 075201
  39. C. Dion, P. Desjardins, M. Chicoine, F. Schiettekatte, P.J. Poole, S. Raymond, Drastic ion-implantation-induced intermixing during annealing of self-assembled InAs/InP(001) quantum dots, Nanotechnology 18 (2007) 015404
  40. P. Wei, S.C. Gujrathi, M. Guihard, F. Schiettekatte, Cross-section for 14N(α, p0)17O reaction in the energy range 3.2–4.0 MeV, Nucl. Instrum. Meth B249 (2006) 85.
  41. C. Dion, P. J. Poole, S. Raymond, P. Desjardins, F. Schiettekatte, Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing, Appl. Phys. Lett. 89 (2006) 131905.
  42. B. Salem, D. Morris, Y. Salissou, V. Aimez, S. Charlebois, M. Chicoine, F. Schiettekatte, Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources, J. Vac. Sci. Technol. A24 (2006) 774.
  43. J.-F. Mercure, R. Karmouch, Y. Anahory, S. Roorda, F. Schiettekatte, Structural relaxation of amorphous silicon depends on implantation temperature, Phys. Rev. B 71 (2005) 134205.
  44. R. Karmouch, J.-F. Mercure, Y. Anahory, F. Schiettekatte, Concentration and ion energy independent annealing kinetics during ion implanted defects annealing, Appl. Phys. Lett. 86 (2005) 031912.
  45. R. Karmouch, J.-F. Mercure, Y. Anahory, F. Schiettekatte, Damage annealing process in implanted poly-silicon studied by nanocalorimetry: effects of heating rate and beam flux, Nucl. Instr. Meth. B241 (2005) 341
  46. R. Karmouch, J.-F. Mercure, F. Schiettekatte, Nanocalorimeter fabrication procedure and data analysis for investigations on implantation damage annealing, Thermochim. Acta 432 (2005) 186.
  47. D. Barba, B. Salem, D. Morris, V. Aimez, J. Beauvais, M. Chicoine, F. Schiettekatte, Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP, J. Appl. Phys. 98 (2005) 054904.
  48. Y.Q. Wang, R. Smirani, F. Schiettekatte, G.G. Ross, Faceting of Si Nanocrystals Embedded in SiO2, Chem. Phys. Lett. 409 (2005) 129.
  49. Y.Q. Wang, R. Smirani, G.G. Ross, F. Schiettekatte, Ordered Coalescence of Si Nanocrystals in SiO2, Phys. Rev. B71 (2005) 161310.
  50. S. Tixier, S. E. Webster, E. C. Young, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, F. Schiettekatte, Band gaps of the dilute quaternary alloys GaNxAs1-x-yBiy and Ga1-yInyNxAs1-x Appl. Phys. Lett. 86, 112113 (2005)
  51. O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, The fluence effect in hydrogen ion cleaving of silicon at the sub-100-nm scale, Appl. Phys. A80 (2005) 1455.
  52. D. Barba, V. Aimez, J. Beauvais, J. Beerens, D. Drouin, M. Chicoine, F. Schiettekatte, Raman Study of As Outgassing and Damage Induced by Ion Implantation in Zn-Doped GaAs, J. Appl. Phys. 96 (2004) 4890.
  53. F. Schiettekatte, M. Chicoine, J.S. Forster, J.S. Geiger, S. Gujrathi, R. Kolarova, A. Paradis, S. Roorda, P. Wei, ERD, 15N external beam for NRRA in air, HIRBS: Ion Beam Analysis Developments on the HVEC EN-1 Tandem, Nucl. Instr. Meth. B 219-220 (2004) 430.
  54. P. Wei, S. Tixier, M. Chicoine, S. Francoeur, A. Mascarenhas, T. Tiedje, F. Schiettekatte, Ion beam characterization of GaAs1-x-yNxBiy epitaxial layers, Nucl. Inst. Meth. B 219-220 (2004) 671
  55. F. Schiettekatte, M. Chicoine, S. Gujrathi, P. Wei, K. Oxorn, Allegria: a new interface to the ERD program, Nucl. Inst. Meth. B 219-220 (2004) 125
  56. P. Wei, M. Chicoine, S. Gujrathi, F. Schiettekatte, J.-N. Beaudry, R.A. Masut, P. Desjardins, Characterization of GaAsxN1-x epitaxial layers by ion beam analysis, J. Vac. Sci. Technol. A22 (2004) 908.
  57. J.-N. Beaudry, R.A. Masut, P. Desjardins, P. Wei, M. Chicoine, G. Bentoumi, R. Leonelli, F. Schiettekatte, S. Guillon, Organometallic vapor phase epitaxy of GaAs1-xNx alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation, J. Vac. Sci. Technol. A 22 (2004) 771.
  58. L. Stafford, M. Gaidi, M. Chaker, J. Margot, O. Langlois, F. Schiettekatte, P. Wei, Dependence of the sputter-etching characteristics of strontium-titanate-oxide thin films on their structural properties, Appl. Phys. Lett. 84 (2004) 2500.
  59. M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, F. Schiettekatte, Z. S. Zhang, L. H. Allen, Thin-film differential scanning nanocalorimetry: heat capacity analysis, Thermochimica Acta 412 (2004) 13.
  60. M. Cai, T. Veres, S. Roorda, F. Schiettekatte, R.W. Cochrane, Structural evolution of Co/Cu nanostructures under 1 MeV ion-beam irradiation, J. Appl. Phys. 95 (2004) 1996
  61. M. Cai, T. Veres, S. Roorda, F. Schiettekatte, R.W. Cochrane, Ion-beam irradiation of Co/Cu nanostructures: Effects on giant magnetoresistance and magnetic properties, J. Appl. Phys. 95 (2004) 2006
  62. M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, F. Schiettekatte, Z. S. Zhang, L. H. Allen, Ultra-sensitive, fast, thin-film differential scanning calorimeter, Rev. Sci. Instr. 75 (2004) 179.
  63. R. Poirier, V. Avalos, S. Dannefaer, F. Schiettekatte, S. Roorda, Annealing mechanisms of divacancies in silicon, Physica B 340-342 (2003) 609.
  64. J.-F. Mercure, R. Karmouch, S. Roorda, F. Schiettekatte, Y. Anahory, Radiation damage in silicon studied in situ by nanocalorimetry, Physica B 340-342 (2003) 622.
  65. R. Poirier, V. Avalos, S. Dannefaer, F. Schiettekatte, S. Roorda, S. K. Misra, Divacancies in proton irradiated silicon: variation of ESR signal with annealing time, Physica B 340-342 (2003) 752.
  66. S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, F. Schiettekatte, Molecular Beam Epitaxy Growth of GaAs1-xBix, Appl. Phys. Lett. 82 (2003) 2245.
  67. R. Poirier, V. Avalos, S. Dannefaer, F. Schiettekatte, S. Roorda, Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation, Nucl. Inst. Meth. B 206 (2003) 85.
  68. R. Poirier, S. Roorda, F.Schiettekatte, M. Lalancette, J. Zikovsky, Divacancies in proton irradiated silicon: characterization and annealing mechanisms Physica B 308-310 (2001) 462.
  69. A.T. Kwan, M.Yu. Efremov, E.A. Olson, F. Schiettekatte, M. Zhang, P.H. Geil L.H. Allen. Nanoscale calorimetry of isolated polyethylene single crystals, J. Polymer Sci. B39 (2001) 1237.
  70. F. Schiettekatte, S. Roorda, R.Poirier, M.O. Fortin, S. Chazal, R. Héliou. Direct evidence for 8-interstitial controlled Extended Defects Nucleation in c-Si, Appl. Phys. Lett. 77 (2000) 4322.
  71. M.Yu. Efremov, F. Schiettekatte, M. Zhang, E.A. Olson, A. T. Kwan, R.S. Berry, L.H. Allen. Discrete Periodic Melting Point Observations for Nanostructures Ensembles, Phys. Rev. Lett. 85 (2000) 3560.
  72. E. A. Olson, M. Yu. Efremov, A.T. Kwan, S. Lai, V. Petrova, F. Schiettekatte, J. T. Warren, M. Zhang, and L. H. Allen. Scanning calorimeter for nanoliter-scale liquid samples, Appl. Phys. Lett. 77 (2000) 2671.
  73. M. Zhang, Yu. Efremov, F. Schiettekatte, E.A. Olson, A. T. Kwan, S.L. Lai, T. Wisleder, J. E. Greene, L.H. Allen. Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements, Phys. Rev. B62 (2000) 10548.
  74. F. Schiettekatte, S. Roorda, R. Poirier, M.O. Fortin, S. Chazal, R. Héliou. Dose and Implantation Temperature Influence on Extended Defects Nucleation in c-Si, Nucl. Instr. Meth. B164-165 (2000) 425
  75. R. Poirier, F. Schiettekatte, S. Roorda, M. O. Fortin, Secondary defects engineering in c-Si: Influence of implantation dose,temperature, and oxygen concentration, J. Vac. Sci. Technol. A18 (2000) 717.
  76. J. Fick, É.J. Knystautas, A. Villeneuve, F. Schiettekatte, S. Roorda, K.A. Richardson. High photoluminescence in erbium-doped chalcogenide thin films, J. Non-Cryst. Solids 272 (2000) 200.
  77. T. Veres, M. Cai, S. Germain, M. Rouabhi, F. Schiettekatte, S. Roorda, R. W. Cochrane, Ion-beam modification of Co/Ag multilayers II: Variation of structural and magnetic properties with Co layer thickness, J. Appl. Phys. 87 (2000) 8513.
  78. F. Schiettekatte, C. Wintgens, S. Roorda Influence of curvature on impurity gettering by nanocavities in Si, Appl. Phys. Lett. 74 (1999) 1857.
  79. X. Liu, P.D. Vu, R.O.Pohl, F. Schiettekatte, S. Roorda, Generation of low-energy excitations in silicon, Phys. Rev. Lett. 81 (1998) 3171.
  80. F. Schiettekatte, G.G. Ross, B. Terreault, Detrapping and diffusion of H and D implanted carbon measured by high temperature laser annealing and depth profiling, J. Nucl. Mater. 256 (1998) 78.
  81. F. Schiettekatte, A. Chevarier, N. Chevarier, A. Plantier, G.G. Ross, Ion beam induced depth profile modification of H, D and He implanted in Be, C and Si, Nucl. Instr. Meth. B132 (1997) 607
  82. F. Schiettekatte, A. Chevarier, N. Chevarier, A. Plantier, G.G. Ross, Quantitative Depth Profiling of Light Elements by Means of the ERD ExB Technique Nucl. Instr. Meth. B118 (1996) 307
  83. B. Terreault, D. Kéroack, G.G. Ross, R.G. Saint-Jacques, F. Schiettekatte, K. Touhouche, P.Zheng, High Temperature H and D Behaviour in Solid and Liquid Beryllium, J. Nucl. Mater. 220-222 (1995) 790
  84. F. Schiettekatte, D. Kéroack, G.G. Ross , B. Terreault, H and D Depth Profiles in Implanted and Laser-annealed Beryllium, Nucl. Instr. Meth. B90 (1994) 401.
  85. F. Schiettekatte, R. Marchand, G.G. Ross. Deconvolution of Noisy Data with Strong Discontinuity and Uncertainty Evaluation, Nucl. Instr. Meth. B93 (1994) 334.
  86. D. Michaud, G.G. Ross, B.L. Stanfield, F. Schiettekatte, P. Couture, C. Boucher, Modification of the Plasma Edge Properties During Divertor Plate Biasing Experiment on TdeV, J. Nucl. Mater. 196-198 (1993) 316.

Comptes-rendus de conférences

(depuis 2000)

  1. F. Schiettekatte, Simulation of Multiple Scattering Effects on Coincidence, AIP Conf. Proc. 1099 (2009) 314.
  2. C. Dion, P. Desjardins, F. Schiettekatte, M. Chicoine, P. J. Poole, S. Raymond, Tuning the Electronic Properties of Self-Assembled InAs/InP(001) Quantum Dots, Meet. Abstr. Electrochem. Soc. 602 (2006) 1269.
  3. O. Moutanabbir, B. Terreault, N. Desrosiers, A. Giguère, G. G. Ross, M. Chicoine, F. Schiettekatte, Hydrogen Cleaving of Silicon at the Sub-100-nm Scale AIP Conf. Proc. 772 (2005) 1491
  4. M. Chicoine, A. Francois, C. Tavares, S. Chevobbe, F. Schiettekatte, V. Aimez, J. Beauvais, J. Beerens, Effects of damage accumulation on quantum well intermixing by low-energy ion implantation in photonic devices, SPIE 5260 (2004) 423
  5. R. Taillefer, P.Desjardins, F. Schiettekatte, A Finite Element Model of Ultra-Sensitive Thin Film Calorimeters for the Study of Size-Dependent Thermodynamical Properties of Materials at the Nanoscale, Proceedings of the first Annual Northeast Workshop on Circuits and Systems (IEEE-NEWCAS2003), Montreal, Canada, June 2003, pp. 129-132.
  6. F. Schiettekatte, V. Aimez, M. Chicoine, S. Chevobbe, J.F. Chabot, J.F. Rajotte. Low energy ion implantation induced intermixing in photonic devices: defects profiling and evolution, Proceedings of the 17th Conference on the Application of the Accelerators in Research and Industry. AIP Conf. Proc. 680 (2003) 609
  7. M. Zhang, M. Yu. Efremov, F. Schiettekatte, E. A. Olson, and L. H. Allen. "Magic" Nanostructures During The Early Stage of Thin Film Growth 2001 Spring Meeting Proceedings 672 (2001) O5.3, Material Research Society
  8. S. Roorda, F. Schiettekatte, M. Cai, T. Veres, A. Tchebotareva. MeV ion implantation for modification of electronic, optical, and magnetic materials SPIE 3413 (1998) 165
  9. F. Schiettekatte, G.G. Ross. ERD spectrum to depth profile conversion program for Windows. Proceeding of the 14th International Conference on the Applicationof Accelerators in Research and Industry. AIP Conf. Proc. 392 (1997) 711
  10. D. Kéroack, F. Schiettekatte, B. Terreault, G.G. Ross. Laser Desorption and Depth Profiling Study of H and D in Implanted Be. Proceedings of International Conference on Fusion Reactor Materials. (1993) Stresa (Italy).
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