Publications

Articles publiés ou acceptés

  1. M. Granata, A. Amato, M. Bischi, M. Bazzan, G. Cagnoli, M. Canepa, M. Chicoine, A. Di Michele, G. Favaro, D. Forest, G. M. Guidi, G. Maggioni, F. Martelli, M. Menotta, M. Montani, F. Piergiovanni, F. Schiettekatte. Optical and mechanical properties of ion-beam-sputtered MgF2 thin films for gravitational-wave interferometers. Phys. Rev. Applied 17, 034058 (2022)
  2. É. Lalande, A.W. Lussier, C. Lévesque, M. Ward, B. Baloukas, L. Martinu, G. Vajente, G. Billingsley, A. Ananyeva, R. Bassiri, M.M. Fejer, F. Schiettekatte. Zirconia-titania-doped tantala optical coatings for low mechanical loss Bragg mirrors. J. Vac. Sci. Technol. A39, 043416 (2021).
  3. G. Vajente, L. Yang, A. Davenport, M. Fazio, A. Ananyeva, L. Zhang, G. Billingsley, K. Prasai, A. Markosyan, R. Bassiri, M. M. Fejer, M. Chicoine, F. Schiettekatte, C. S. Menoni. Low Mechanical Loss TiO2:GeO2 Coatings for Reduced Thermal Noise in Gravitational Wave Interferometers, Phys. Rev. Lett. 127, 071101 (2021)
  4. L. Yang, G. Vajente, M. Fazio, A. Ananyeva, G. Billingsley, A. Markosyan, R. Bassiri, K. Prasai, M.M. Fejer, M. Chicoine, F. Schiettekatte, C.S. Menoni, Enhanced medium-range order in vapor-deposited germania glasses at elevated temperatures, Sci. Adv. 7 (2021) eabh1117
  5. H. Nozard, F. Schiettekatte, Arrhenius behavior of crystallization at up to 184 000 K/s in Ge2Sb2Te5 thin films, AIP Advances 11 (2021), 085226
  6. M. Abernathy, A. Amato, A. Ananyeva, S. Angelova, B. Baloukas, R. Bassiri, G. Billingsley, R. Birney, G. Cagnoli, M. Canepa, M. Coulon, J. Degallaix, A. Di. Michele, M.A. Fazio, M.M. Fejer, D. Forest, C. Gier, M. Granata, A.M. Gretarsson, E.M. Gretarsson, E. Gustafson, E.J. Hough, M. Irving, É. Lalande, C. Lévesque, A.W. Lussier, A. Markosyan, I.W. Martin, L. Martinu, B. Maynard, C.S. Menoni, C. Michel, P.G. Murray, C. Osthelder, S. Penn, L. Pinard, K. Prasai, S. Reid, R. Robie, S. Rowan, B. Sassolas, F. Schiettekatte, R. Shink, S. Tait, J. Teillon, G. Vajente, M. Ward, L. Yang, Exploration of co-sputtered Ta2O5-ZrO2 thin films for gravitational-wave detectors, Class. Quant. Grav. 38 (2021) 195021
  7. F. Schiettekatte, Energy conservation strategies for electric vehicles on hills, Am. J. Phys. 89, 1018 (2021)
  8. S. Vallières, M. Salvadori, P. Puyuelo-Valdes, S. Payeur, S. Fourmaux, F. Consoli, C. Verona, E.d’Humières, M. Chicoine, S. Roorda, F. Schiettekatte, P. Antici. Thomson parabola and time-of-flight detector cross-calibration methodology on the ALLS 100 TW laser-driven ion acceleration beamline, Rev. Sci. Instrum. 91 (2020) 103303.
  9. M. Sun, S. Li, J. Zou, Z. Cui, Q. Zhang, F. Schiettekatte, D. Barba, B. Liu, Y. Wang. Graphene-Wrapped ZnMn2O4 Nanoparticles with Enhanced Performance as Lithium-Ion Battery Anode Materials. Nano 15 (2020) 2050117.
  10. A. Aghdaei, R. Pandiyan, B. Ilahi, M. Chicoine, M. El Gowini, F. Schiettekatte, L.G. Fréchette, D. Morris, Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films. J. Appl. Phys. 128 (2020) 245701.
  11. S.Vallières, C. Bienvenue, P. Puyuelo-Valdes, M. Salvadori, E. d'Humières, F. Schiettekatte, P. Antici. Low-energy proton calibration and energy-dependence linearization of EBT-XD radiochromic films]. Rev. Sci. Instrum. 90 (2019) 083301.
  12. K. Prasai, J. Jiang, A. Mishkin, B. Shyam, S. Angelova, R. Birney, D. A. Drabold, M. Fazio, E. K. Gustafson, G. Harry, S. Hoback, J. Hough, C. Lévesque, I. MacLaren, A. Markosyan, I. W. Martin, C. S. Menoni, P. G. Murray, S. Penn, S. Reid, R. Robie, S. Rowan, F. Schiettekatte, R. Shink, A. Turner, G. Vajente, H-P. Cheng, M. M. Fejer, A. Mehta, R. Bassiri, High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing. Phys. Rev. Lett. 123 (2019) 045501
  13. J. Wang, S.H.Y. Huang, C. Herrmann, S.A. Scott, F. Schiettekatte, K.L. Kavanagh, Focussed He Ion Channeling Through Si Nanomembranes. J. Vac. Sci. Technol. B36 (2018) 021203
  14. G. Vajente, R. Birney, A. Ananyeva, S. Angelova, R. Asselin, B. Baloukas, R. Bassiri, G. Billingsley, M. M. Fejer, D. Gibson, L. J. Godbout, E. Gustafson, A. Heptonstall, J. Hough, S. MacFoy, A. Markosyan, I. Martin, L. Martinu, P. G. Murray, S. Penn, S. Roorda, S. Rowan, F. Schiettekatte, R. Shink, C. Torrie, D. Vine, S. Reid, R. X. Adhikari. Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings. Class. Quant. Grav. 35 (2018) 075001
  15. M. Chicoine, F. Schiettekatte, M.I. Laitinen, T. Sajavaara, Oxy-nitrides characterization with a new ERD-TOF system, Nucl. Intrum. Meth. B 406 (2017) 112
  16. M. Mayer, P. Malinsky, F. Schiettekatte, Z. Zolnai, Intercomparison of ion beam analysis software for the simulation of backscattering spectra from two-dimensional structures, Nucl. Instrum. Meth. B 385 (2016) 65
  17. F. Schiettekatte, M. Chicoine, Spectrum simulation of rough and nanostructured targets from their 2D and 3D image by Monte Carlo methods, Nucl. Instrum. Meth. B 371 (2016) 106
  18. M. Moser, P. Reichart, A. Bergmaier, C. Greubel, F. Schiettekatte, G. Dollinger, Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation, Nucl. Instrum. Meth. B 371 (2016) 161
  19. M. Celikin, D. Barba, A. Ruediger, M. Chicoine, F. Schiettekatte, F. Rosei, Co-mediated nucleation of erbium/silicon nanoclusters in fused silica, J. Mater. Res. 30 (2015) 3003
  20. A. Fekecs, A. Korinek, M. Chicoine, B. Ilahi, F. Schiettekatte, D. Morris, R. Arès, Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure, Phys. Status Solidi A 212 (2015) 1888
  21. A. Fekecs, M. Chicoine, B. Ilahi, A. J. SpringThorpe, F. Schiettekatte, D. Morris, P. G. Charette, R. Arès, Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions, Nucl. Instrum. Meth. B 359 (2015) 99
  22. F. Schiettekatte, Tails, Nucl. Instrum. Meth. B 332 (2014) 404
  23. L.K. Béland, Y. Anahory, D. Smeets, M. Guihard, P. Brommer, J.-F. Joly, J.-C. Pothier, L.J. Lewis, N. Mousseau, F. Schiettekatte, Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si, Phys. Rev. Lett. 111 (2013) 105502
  24. P. Turcotte-Tremblay, M. Guihard, S. Gaudet, M. Chicoine, C. Lavoie, P. Desjardins, F. Schiettekatte, Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si, J. Vac. Sci. Technol. B 31 (2013) 051213
  25. A. Fekecs, M. Chicoine, B. Ilahi, F. Schiettekatte, P.G. Charette, R. Ares, Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing, J. Phys. D: Appl. Phys 46 (2013) 165106
  26. M. Molina-Ruiz, A. F. Lopeandía, M. González-Silveira, Y. Anahory, M. Guihard, G. Garcia, M. T. Clavaguera-Mora, F. Schiettekatte, J. Rodríguez-Viejo, Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry, Appl. Phys. Lett. 102 (2013) 143111
  27. A. Fekecs, M. Bernier, D. Morris, M. Chicoine, F. Schiettekatte, P. Charette, and R. Arès, Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices, Optical Materials Express 1 (2011) 1165
  28. M. Mayer, W. Eckstein, H. Langhuth, F. Schiettekatte, U. von Toussaint, Computer Simulation of Ion Beam Analysis: Possibilities and Limitations. Nucl. Instrum. Meth. B 269 (2011) 3006
  29. J.-C. Pothier, F. Schiettekatte, L.J. Lewis, Flowing damage in ion-implanted amorphous silicon, Phys. Rev. B 83 (2011) 235206
  30. L. Hu, L. de la Rama, M. Efremov, Y. Anahory, F. Schiettekatte, L. H. Allen, Leslie, Synthesis and Characterization of Single-Layer Silver-Decanethiolate Lamellar Crystals, J. Amer. Chem. Soc. 133 (2011) 4367
  31. Y. Anahory, M. Guihard, D. Smeets, R. Karmouch, F. Schiettekatte, Ph. Vasseur, P. Desjardins, Liang Hu, L.H. Allen, E. Leon-Gutierrez, J. Rodriguez-Viejo, Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors, Thermochim. Acta 510 (2010) 126.
  32. H. Kallel N. Mousseau, F. Schiettekatte, Evolution of the Potential-Energy Surface of Amorphous Silicon Phys. Rev. Lett. 105 (2010) 045503.
  33. D. Barba, D. Koshel, F. Martin, G.G. Ross, M. Chicoine, F. Schiettekatte, M. Yedji, J. Demarche, G. Terwagne, Silicon nanocrystal synthesis by implantation of natural Si isotopes, J. Luminescence 130 (2010) 669.
  34. R. Kumaran, S.E. Webster, S. Penson, W. Li, T. Tiedje, P. Wei, F. Schiettekatte, Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers, Optics Lett. 34 (2009) 3358.
  35. O. Moutanabbir, YJ. Chabal, M. Chicoine, S. Christiansen, R. Krause-Rehberg, F. Schiettekatte, R. Scholz, O. Seitz, S. Senz, F. Süßkraut, U. Gösele, Mechanisms of ion-induced GaN thin layer splitting, Nucl. Instr. Meth. B267 (2009) 1264.
  36. M. Guihard, P. Turcotte-Tremblay, S. Gaudet, C. Coia, S. Roorda, P. Desjardins, C. Lavoie, F. Schiettekatte, Controlling nickel silicide phase formation by Si implantation damage, Nucl. Instr. Meth. B267 (2009) 1285.
  37. J.-F. Desjardins, M. Chicoine, F. Schiettekatte, D. Barba, F. Martin, G.G. Ross, Impact of Ni co-implantation on Si nanocrystals formation and luminescence, Nucl. Instr. Meth. B267 (2009) 1317.
  38. I.B. Radovic, M. Jaksic, F. Schiettekatte, Technique for sensitive carbon depth profiling in thin samples using C-C elastic scattering, 24 (2009) 194.
  39. F. Schiettekatte, Fast Monte Carlo for Ion Beam Analysis Simulations, Nucl. Instr. Meth. B266 (2008) 1880.
  40. C. Dion, P. Desjardins, F. Schiettekatte, M. Chicoine, M. D. Robertson, N. Shtinkov, P. J. Poole, X. Wu, S. Raymond, Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation, J. Appl. Phys. 104, (2008) 043527.
  41. O. Moutanabbir, R. Scholz, S. Senz, U. Gösele, M. Chicoine, F. Schiettekatte, F. Süßkraut, R. Krause-Rehberg, Microstructural evolution in H ion induced splitting of freestanding GaN, Appl. Phys. Lett. 93 (2008) 031916
  42. P.J. Simpson, A.P. Knights, M. Chicoine, K. Dudeck, O. Moutanabbir, S.Ruffell, F. Schiettekatte, B. Terreault, Thermal evolution of defects produced by implantation of H, D and He in Silicon, App. Surf. Sci. 255 (2008) 63.
  43. N. Desrosiers, A. Giguère, B. Terreault, M. Chicoine, F. Schiettekatte, Implantation effects of low energy H and D ions in germanium at -120 °C and room temperature. Nucl. Instr. Meth. B266 (2008) 1880
  44. C. Dion, P. Desjardins, N. Shtinkov, F. Schiettekatte, P. J. Poole, and S. Raymond, Effects of grown-in defects on interdiffusion dynamics in InAs/InP(001) quantum dots subjected to rapid thermal annealing, J. Appl. Phys. 103 (2008) 083526
  45. C. Dion, P. Desjardins, N. Shtinkov, M. D. Robertson, F. Schiettekatte, P. J. Poole, S. Raymond, Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation, Phys. Rev. B77 (2008)075338
  46. L. Stafford, W.T. Lim, S.J. Pearton, Ju-Il Song, J.-S. Park, Y.-W. Heo, J.-H. Lee, J.-J. Kim, M. Chicoine, F. Schiettekatte, Deep etch-induced damage during ion-assisted chemical etching of sputtered indium-zinc-oxide films in Ar/CH4/H2 plasmas, Thin Solid Films 516 (2008) 2869
  47. L. Stafford, W.T. Lim, S.J. Pearton, M. Chicoine, F. Schiettekatte, J.-I. Song, J.-S. Park, Y.W. Heo, J.-H. Lee, J.-J. Kim, I.I. Kravchenko, Influence of the film properties on the plasma etching dynamics of rf-sputtered indium-zinc-oxide layers, J. Vac. Sci. Technol. A25 (2007) 659
  48. R. Karmouch, Y. Anahory, J.-F. Mercure, D. Bouilly, M. Chicoine, G. Bentoumi, R. Leonelli, Y.Q. Wang, F. Schiettekatte, Damage evolution in low-energy-ion implanted silicon, Phys. Rev. B75 (2007) 075304
  49. O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, P. J. Simpson, Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon, Phys. Rev. B75 (2007) 075201
  50. C. Dion, P. Desjardins, M. Chicoine, F. Schiettekatte, P.J. Poole, S. Raymond, Drastic ion-implantation-induced intermixing during annealing of self-assembled InAs/InP(001) quantum dots, Nanotechnology 18 (2007) 015404
  51. P. Wei, S.C. Gujrathi, M. Guihard, F. Schiettekatte, Cross-section for 14N(α, p0)17O reaction in the energy range 3.2–4.0 MeV, Nucl. Instrum. Meth B249 (2006) 85.
  52. C. Dion, P. J. Poole, S. Raymond, P. Desjardins, F. Schiettekatte, Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing, Appl. Phys. Lett. 89 (2006) 131905.
  53. B. Salem, D. Morris, Y. Salissou, V. Aimez, S. Charlebois, M. Chicoine, F. Schiettekatte, Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources, J. Vac. Sci. Technol. A24 (2006) 774.
  54. J.-F. Mercure, R. Karmouch, Y. Anahory, S. Roorda, F. Schiettekatte, Structural relaxation of amorphous silicon depends on implantation temperature, Phys. Rev. B 71 (2005) 134205.
  55. R. Karmouch, J.-F. Mercure, Y. Anahory, F. Schiettekatte, Concentration and ion energy independent annealing kinetics during ion implanted defects annealing, Appl. Phys. Lett. 86 (2005) 031912.
  56. R. Karmouch, J.-F. Mercure, Y. Anahory, F. Schiettekatte, Damage annealing process in implanted poly-silicon studied by nanocalorimetry: effects of heating rate and beam flux, Nucl. Instr. Meth. B241 (2005) 341
  57. R. Karmouch, J.-F. Mercure, F. Schiettekatte, Nanocalorimeter fabrication procedure and data analysis for investigations on implantation damage annealing, Thermochim. Acta 432 (2005) 186.
  58. D. Barba, B. Salem, D. Morris, V. Aimez, J. Beauvais, M. Chicoine, F. Schiettekatte, Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP, J. Appl. Phys. 98 (2005) 054904.
  59. Y.Q. Wang, R. Smirani, F. Schiettekatte, G.G. Ross, Faceting of Si Nanocrystals Embedded in SiO2, Chem. Phys. Lett. 409 (2005) 129.
  60. Y.Q. Wang, R. Smirani, G.G. Ross, F. Schiettekatte, Ordered Coalescence of Si Nanocrystals in SiO2, Phys. Rev. B71 (2005) 161310.
  61. S. Tixier, S. E. Webster, E. C. Young, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, F. Schiettekatte, Band gaps of the dilute quaternary alloys GaNxAs1-x-yBiy and Ga1-yInyNxAs1-x Appl. Phys. Lett. 86, 112113 (2005)
  62. O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, The fluence effect in hydrogen ion cleaving of silicon at the sub-100-nm scale, Appl. Phys. A80 (2005) 1455.
  63. D. Barba, V. Aimez, J. Beauvais, J. Beerens, D. Drouin, M. Chicoine, F. Schiettekatte, Raman Study of As Outgassing and Damage Induced by Ion Implantation in Zn-Doped GaAs, J. Appl. Phys. 96 (2004) 4890.
  64. F. Schiettekatte, M. Chicoine, J.S. Forster, J.S. Geiger, S. Gujrathi, R. Kolarova, A. Paradis, S. Roorda, P. Wei, ERD, 15N external beam for NRRA in air, HIRBS: Ion Beam Analysis Developments on the HVEC EN-1 Tandem, Nucl. Instr. Meth. B 219-220 (2004) 430.
  65. P. Wei, S. Tixier, M. Chicoine, S. Francoeur, A. Mascarenhas, T. Tiedje, F. Schiettekatte, Ion beam characterization of GaAs1-x-yNxBiy epitaxial layers, Nucl. Inst. Meth. B 219-220 (2004) 671
  66. F. Schiettekatte, M. Chicoine, S. Gujrathi, P. Wei, K. Oxorn, Allegria: a new interface to the ERD program, Nucl. Inst. Meth. B 219-220 (2004) 125
  67. P. Wei, M. Chicoine, S. Gujrathi, F. Schiettekatte, J.-N. Beaudry, R.A. Masut, P. Desjardins, Characterization of GaAsxN1-x epitaxial layers by ion beam analysis, J. Vac. Sci. Technol. A22 (2004) 908.
  68. J.-N. Beaudry, R.A. Masut, P. Desjardins, P. Wei, M. Chicoine, G. Bentoumi, R. Leonelli, F. Schiettekatte, S. Guillon, Organometallic vapor phase epitaxy of GaAs1-xNx alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation, J. Vac. Sci. Technol. A 22 (2004) 771.
  69. L. Stafford, M. Gaidi, M. Chaker, J. Margot, O. Langlois, F. Schiettekatte, P. Wei, Dependence of the sputter-etching characteristics of strontium-titanate-oxide thin films on their structural properties, Appl. Phys. Lett. 84 (2004) 2500.
  70. M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, F. Schiettekatte, Z. S. Zhang, L. H. Allen, Thin-film differential scanning nanocalorimetry: heat capacity analysis, Thermochimica Acta 412 (2004) 13.
  71. M. Cai, T. Veres, S. Roorda, F. Schiettekatte, R.W. Cochrane, Structural evolution of Co/Cu nanostructures under 1 MeV ion-beam irradiation, J. Appl. Phys. 95 (2004) 1996
  72. M. Cai, T. Veres, S. Roorda, F. Schiettekatte, R.W. Cochrane, Ion-beam irradiation of Co/Cu nanostructures: Effects on giant magnetoresistance and magnetic properties, J. Appl. Phys. 95 (2004) 2006
  73. M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, F. Schiettekatte, Z. S. Zhang, L. H. Allen, Ultra-sensitive, fast, thin-film differential scanning calorimeter, Rev. Sci. Instr. 75 (2004) 179.
  74. R. Poirier, V. Avalos, S. Dannefaer, F. Schiettekatte, S. Roorda, Annealing mechanisms of divacancies in silicon, Physica B 340-342 (2003) 609.
  75. J.-F. Mercure, R. Karmouch, S. Roorda, F. Schiettekatte, Y. Anahory, Radiation damage in silicon studied in situ by nanocalorimetry, Physica B 340-342 (2003) 622.
  76. R. Poirier, V. Avalos, S. Dannefaer, F. Schiettekatte, S. Roorda, S. K. Misra, Divacancies in proton irradiated silicon: variation of ESR signal with annealing time, Physica B 340-342 (2003) 752.
  77. S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, F. Schiettekatte, Molecular Beam Epitaxy Growth of GaAs1-xBix, Appl. Phys. Lett. 82 (2003) 2245.
  78. R. Poirier, V. Avalos, S. Dannefaer, F. Schiettekatte, S. Roorda, Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation, Nucl. Inst. Meth. B 206 (2003) 85.
  79. R. Poirier, S. Roorda, F.Schiettekatte, M. Lalancette, J. Zikovsky, Divacancies in proton irradiated silicon: characterization and annealing mechanisms Physica B 308-310 (2001) 462.
  80. A.T. Kwan, M.Yu. Efremov, E.A. Olson, F. Schiettekatte, M. Zhang, P.H. Geil L.H. Allen. Nanoscale calorimetry of isolated polyethylene single crystals, J. Polymer Sci. B39 (2001) 1237.
  81. F. Schiettekatte, S. Roorda, R.Poirier, M.O. Fortin, S. Chazal, R. Héliou. Direct evidence for 8-interstitial controlled Extended Defects Nucleation in c-Si, Appl. Phys. Lett. 77 (2000) 4322.
  82. M.Yu. Efremov, F. Schiettekatte, M. Zhang, E.A. Olson, A. T. Kwan, R.S. Berry, L.H. Allen. Discrete Periodic Melting Point Observations for Nanostructures Ensembles, Phys. Rev. Lett. 85 (2000) 3560.
  83. E. A. Olson, M. Yu. Efremov, A.T. Kwan, S. Lai, V. Petrova, F. Schiettekatte, J. T. Warren, M. Zhang, and L. H. Allen. Scanning calorimeter for nanoliter-scale liquid samples, Appl. Phys. Lett. 77 (2000) 2671.
  84. M. Zhang, Yu. Efremov, F. Schiettekatte, E.A. Olson, A. T. Kwan, S.L. Lai, T. Wisleder, J. E. Greene, L.H. Allen. Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements, Phys. Rev. B62 (2000) 10548.
  85. F. Schiettekatte, S. Roorda, R. Poirier, M.O. Fortin, S. Chazal, R. Héliou. Dose and Implantation Temperature Influence on Extended Defects Nucleation in c-Si, Nucl. Instr. Meth. B164-165 (2000) 425
  86. R. Poirier, F. Schiettekatte, S. Roorda, M. O. Fortin, Secondary defects engineering in c-Si: Influence of implantation dose,temperature, and oxygen concentration, J. Vac. Sci. Technol. A18 (2000) 717.
  87. J. Fick, É.J. Knystautas, A. Villeneuve, F. Schiettekatte, S. Roorda, K.A. Richardson. High photoluminescence in erbium-doped chalcogenide thin films, J. Non-Cryst. Solids 272 (2000) 200.
  88. T. Veres, M. Cai, S. Germain, M. Rouabhi, F. Schiettekatte, S. Roorda, R. W. Cochrane, Ion-beam modification of Co/Ag multilayers II: Variation of structural and magnetic properties with Co layer thickness, J. Appl. Phys. 87 (2000) 8513.
  89. F. Schiettekatte, C. Wintgens, S. Roorda Influence of curvature on impurity gettering by nanocavities in Si, Appl. Phys. Lett. 74 (1999) 1857.
  90. X. Liu, P.D. Vu, R.O.Pohl, F. Schiettekatte, S. Roorda, Generation of low-energy excitations in silicon, Phys. Rev. Lett. 81 (1998) 3171.
  91. F. Schiettekatte, G.G. Ross, B. Terreault, Detrapping and diffusion of H and D implanted carbon measured by high temperature laser annealing and depth profiling, J. Nucl. Mater. 256 (1998) 78.
  92. F. Schiettekatte, A. Chevarier, N. Chevarier, A. Plantier, G.G. Ross, Ion beam induced depth profile modification of H, D and He implanted in Be, C and Si, Nucl. Instr. Meth. B132 (1997) 607
  93. F. Schiettekatte, A. Chevarier, N. Chevarier, A. Plantier, G.G. Ross, Quantitative Depth Profiling of Light Elements by Means of the ERD ExB Technique Nucl. Instr. Meth. B118 (1996) 307
  94. B. Terreault, D. Kéroack, G.G. Ross, R.G. Saint-Jacques, F. Schiettekatte, K. Touhouche, P.Zheng, High Temperature H and D Behaviour in Solid and Liquid Beryllium, J. Nucl. Mater. 220-222 (1995) 790
  95. F. Schiettekatte, D. Kéroack, G.G. Ross , B. Terreault, H and D Depth Profiles in Implanted and Laser-annealed Beryllium, Nucl. Instr. Meth. B90 (1994) 401.
  96. F. Schiettekatte, R. Marchand, G.G. Ross. Deconvolution of Noisy Data with Strong Discontinuity and Uncertainty Evaluation, Nucl. Instr. Meth. B93 (1994) 334.
  97. D. Michaud, G.G. Ross, B.L. Stanfield, F. Schiettekatte, P. Couture, C. Boucher, Modification of the Plasma Edge Properties During Divertor Plate Biasing Experiment on TdeV, J. Nucl. Mater. 196-198 (1993) 316.

Comptes-rendus de conférences

(depuis 2000)

  1. F. Schiettekatte, Simulation of Multiple Scattering Effects on Coincidence, AIP Conf. Proc. 1099 (2009) 314.
  2. C. Dion, P. Desjardins, F. Schiettekatte, M. Chicoine, P. J. Poole, S. Raymond, Tuning the Electronic Properties of Self-Assembled InAs/InP(001) Quantum Dots, Meet. Abstr. Electrochem. Soc. 602 (2006) 1269.
  3. O. Moutanabbir, B. Terreault, N. Desrosiers, A. Giguère, G. G. Ross, M. Chicoine, F. Schiettekatte, Hydrogen Cleaving of Silicon at the Sub-100-nm Scale AIP Conf. Proc. 772 (2005) 1491
  4. M. Chicoine, A. Francois, C. Tavares, S. Chevobbe, F. Schiettekatte, V. Aimez, J. Beauvais, J. Beerens, Effects of damage accumulation on quantum well intermixing by low-energy ion implantation in photonic devices, SPIE 5260 (2004) 423
  5. R. Taillefer, P.Desjardins, F. Schiettekatte, A Finite Element Model of Ultra-Sensitive Thin Film Calorimeters for the Study of Size-Dependent Thermodynamical Properties of Materials at the Nanoscale, Proceedings of the first Annual Northeast Workshop on Circuits and Systems (IEEE-NEWCAS2003), Montreal, Canada, June 2003, pp. 129-132.
  6. F. Schiettekatte, V. Aimez, M. Chicoine, S. Chevobbe, J.F. Chabot, J.F. Rajotte. Low energy ion implantation induced intermixing in photonic devices: defects profiling and evolution, Proceedings of the 17th Conference on the Application of the Accelerators in Research and Industry. AIP Conf. Proc. 680 (2003) 609
  7. M. Zhang, M. Yu. Efremov, F. Schiettekatte, E. A. Olson, and L. H. Allen. "Magic" Nanostructures During The Early Stage of Thin Film Growth 2001 Spring Meeting Proceedings 672 (2001) O5.3, Material Research Society
  8. S. Roorda, F. Schiettekatte, M. Cai, T. Veres, A. Tchebotareva. MeV ion implantation for modification of electronic, optical, and magnetic materials SPIE 3413 (1998) 165
  9. F. Schiettekatte, G.G. Ross. ERD spectrum to depth profile conversion program for Windows. Proceeding of the 14th International Conference on the Applicationof Accelerators in Research and Industry. AIP Conf. Proc. 392 (1997) 711
  10. D. Kéroack, F. Schiettekatte, B. Terreault, G.G. Ross. Laser Desorption and Depth Profiling Study of H and D in Implanted Be. Proceedings of International Conference on Fusion Reactor Materials. (1993) Stresa (Italy).
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