Nanocalorimétrie

[[recettes]]

# L.K. Béland, Y. [[Anahory]], D. [[Smeets]], M. [[Guihard]], P. Brommer, J.-F. Joly, J.-C. Pothier, L.J. Lewis, N. Mousseau, '''F. Schiettekatte''', [[http://link.aps.org/doi/10.1103/PhysRevLett.111.105502|Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si]], Phys. Rev. Lett. '''111''' (2013) 105502

!!Other applications

# M. Molina-Ruiz, A. F. Lopeandía, M. González-Silveira, Y. [[Anahory]], M. [[Guihard]], G. Garcia, M. T. Clavaguera-Mora, '''F. Schiettekatte''', J. Rodríguez-Viejo, [[ http://dx.doi.org/10.1063/1.4800934|Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry]], Appl. Phys. Lett. '''102''' (2013) 143111

# L. Hu, L. de la Rama, M. Efremov, Y. Anahory, F. Schiettekatte, L. H. Allen, Leslie, [[http://pubs.acs.org/doi/abs/10.1021/ja107817x|Synthesis and Characterization of Single-Layer Silver-Decanethiolate Lamellar Crystals]], J. Amer. Chem. Soc. '''133''' (2011) 4367

#Y. [[Anahory]], M. [[Guihard]], D. Smeets, R. [[Karmouch]], '''F. Schiettekatte''', Ph. Vasseur, P. Desjardins, Liang Hu, L.H. Allen, E. Leon-Gutierrez, J. Rodriguez-Viejo, [[Attach:TCA_cNC.pdf|Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors]], Thermochim. Acta '''510''' (2010) 126.

Recently, our group successfully developed a [[Attach:TCA_cNC.pdf|nanocalorimeter comprising a thin layer of mono-crystalline Si on its surface]]. This device opens the door for calorimetric measurements to be made on a pure, atomically ordered, and well documented surface. This includes measuring the heat exchanges during the initial phases of thin layer growth, the formation of self-assembled nanostructures of semiconductors and organic materials, solid-state reaction in ultra-thin films, catalytic processes, etc.

#Y. [[Anahory]], M. [[Guihard]], D. Smeets, R. [[Karmouch]], '''F. Schiettekatte''', Ph. Vasseur, P. Desjardins, Liang Hu, L.H. Allen, E. Leon-Gutierrez, J. Rodriguez-Viejo, [[Attach:TCA_cNC.pdf|Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors]], Thermochimica Acta '''510''' (2010) 126

Recently, our group successfully developed a [[http://nouvelles.umontreal.ca/content/view/1659/1/|nanocalorimeter comprising a thin layer of mono-crystalline Si on its surface]]. This device opens the door for calorimetric measurements to be made on a pure, atomically ordered, and well documented surface. This includes measuring the heat exchanges during the initial phases of thin layer growth, the formation of self-assembled nanostructures of semiconductors and organic materials, solid-state reaction in ultra-thin films, catalytic processes, etc.

(:notabs:)

Recently, our group successfully developed a [[http://nouvelles.umontreal.ca/content/view/1659/1/|nanocalorimeter comprising a thin layer of monocrystaline Si on its surface]]. This device opens the door for calorimetric measurements to be made on a pure, atomically ordered, and well documented surface. This includes measuring the heat exchanges during the initial phases of thin layer growth, the formation of self-assembled nanostructures of semiconductors and organic materials, catalytic processes, etc.

Nanocalorimetry is a technique developed by [[http://www.mse.uiuc.edu/faculty/allen/profile.html|Leslie H. Allen's]] [[http://allen.mse.uiuc.edu/index.htm|group]] at the University of Illinois at Urbana-Champaign. I was part of this group as a postdoc in 1999-2000 and then started developing the technique with my students at the Université de Montréal to look namely at damage annealing of low-energy ion-implanted silicon.

Nanocalorimetry is a technique developed by [[http://www.mse.uiuc.edu/faculty/allen/profile.html|Leslie H. Allen's]] [[http://allen.mse.uiuc.edu/index.htm|group]] at the University of Illinois at Urbana-Champaign. I was part of this group as a postdoc in 1999-2000 and then imported the technique at the Université de Montréal to look namely at damage annealing of low-energy ion-implanted silicon.

!!Description of the technique, fabrication and calculation method

!!Damage annealing

!!Melting point depression

!!Others

Nanocalorimetry is a technique developed by [[http://www.mse.uiuc.edu/faculty/allen/profile.html|Leslie H. Allen's]] [[http://allen.mse.uiuc.edu/index.htm|group]] at the University of Illinois at Urbana-Champaign. I was part of this group as a postdoc in 1999-2000 and the imported the technique at the Université de Montréal to look namely at damage annealing of low-energy ion-implanted silicon.

Nanocalorimetry is a thin-film equivalent of Differential Scanning Calorimetry (DSC) that can measure the heat associated with reactions or transformations occurring in ultra-thin films, that is, layers of the order of a monolayer or less. It is thus a valuable tool to investigate ''in situ'' the evolution of thin-films and nanostructures from a thermal point-of-view.

Here are some contributions regrouped by subject:

!!!Description of the technique, fabrication and calculation method

#R. [[Karmouch]], J.-F. [[Mercure]], '''F. Schiettekatte''', [[Attach:TCA_Rachid.pdf|Nanocalorimeter fabrication procedure and data analysis for investigations on implantation damage annealing]], Thermochim. Acta '''432''' (2005) 186.

#M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, '''F. Schiettekatte''', Z. S. Zhang, L. H. Allen, [[Attach:ThermoActaEfremov.pdf|Thin-film differential scanning nanocalorimetry: heat capacity analysis]], Thermochimica Acta '''412''' (2004) 13.

#M. Yu. Efremov, E. A. Olson, M. Zhang, S. L. Lai, '''F. Schiettekatte''', Z. S. Zhang, L. H. Allen, [[Attach:RevSciInst_nanocal.pdf|Ultra-sensitive, fast, thin-film differential scanning calorimeter]], Rev. Sci. Instr. '''75''' (2004) 179.


!!!Damage annealing


#R. [[Karmouch]], Y. [[Anahory]], J.-F. [[Mercure]], D. [[Bouilly]], M. [[Chicoine]], G. Bentoumi, R. Leonelli, Y.Q. [[Wang]], '''F. Schiettekatte''', [[Attach:PRB2007_Rachid.pdf|Damage evolution in low-energy-ion implanted silicon]], Phys. Rev. '''B75''' (2007) 075304

#J.-F. [[Mercure]], R. [[Karmouch]], Y. [[Anahory]], S. Roorda, '''F. Schiettekatte''', [[Attach:PRBnanocal_a-Sil.pdf|Structural relaxation of amorphous silicon depends on implantation temperature]], Phys. Rev. B '''71''' (2005) 134205.

#R. [[Karmouch]], J.-F. [[Mercure]], Y. [[Anahory]], '''F. Schiettekatte''', [[Attach:APLnanocalPolySi_Publ.pdf|Concentration and ion energy independent annealing kinetics during ion implanted defects annealing]], Appl. Phys. Lett. '''86''' (2005) 031912.

#R. [[Karmouch]], J.-F. [[Mercure]], Y. [[Anahory]], '''F. Schiettekatte''', [[Attach:NIMB_CAARI2004_nanocal.pdf|Damage annealing process in implanted poly-silicon studied by nanocalorimetry: effects of heating rate and beam flux]], Nucl. Instr. Meth. B241 (2005) 341

# J.-F. [[Mercure]], R. [[Karmouch]], S. Roorda, '''F. Schiettekatte''', Y. [[Anahory]], [[Attach:PhysicaB_nanocal_a-Si.pdf|Radiation damage in silicon studied in situ by nanocalorimetry]], Physica '''B 340-342''' (2003) 622.


!Melting point depression

#M.Yu. Efremov, '''F. Schiettekatte''', M. Zhang, E.A. Olson, A. T. Kwan, R.S. Berry, L.H. Allen. [[Attach:PRL_Bumps.pdf|Discrete Periodic Melting Point Observations for Nanostructures Ensembles]], Phys. Rev. Lett. '''85''' (2000) 3560.

#M. Zhang, Yu. Efremov, '''F. Schiettekatte''', E.A. Olson, A. T. Kwan, S.L. Lai, T. Wisleder, J. E. Greene, L.H. Allen. [[Attach:PRB_nanocal.pdf|Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements]], Phys. Rev. '''B62''' (2000) 10548.

!!!Other

#A.T. Kwan, M.Yu. Efremov, E.A. Olson, '''F. Schiettekatte''', M. Zhang, P.H. Geil L.H. Allen. [[Attach:JPSb_nanocalPolyE.pdf|Nanoscale calorimetry of isolated polyethylene single crystals]], J. Polymer Sci. '''B39''' (2001) 1237.

#E. A. Olson, M. Yu. Efremov, A.T. Kwan, S. Lai, V. Petrova, '''F. Schiettekatte''', J. T. Warren, M. Zhang, and L. H. Allen. [[Attach:APL_bioboxes.pdf|Scanning calorimeter for nanoliter-scale liquid samples]], Appl. Phys. Lett. '''77''' (2000) 2671.

En construction!